Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
9th Edition
ISBN: 9781259989452
Author: Hayt
Publisher: Mcgraw Hill Publishers
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Chapter 2, Problem 59E
To determine
Design a 10 Ω resistor.
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An n-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity of electrons in this
material. Un=1350 cm²/Vs, up = 480 cm²/V.s.
Select one:
O a. 2.7 x 10 m/s
O b.
2.7 x 10 m/s
O C.
None of these
O d. 2.7 x 108 m/s
Assuming silicon with completely ionized dopants, compute n and p for the following
case.
-3
N₁=5.00×10¹6 cm
N₁ = 0
T = 700 K
n (700 K) = 2.865×10¹6 cm
-3
At what temperature will intrinsic silicon become an insulator, based on the definitions in Table ? Assume that μn = 1800 cm2/V·s and μp = 700 cm2/V·s.
Chapter 2 Solutions
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
Ch. 2.1 - A krypton fluoride laser emits light at a...Ch. 2.1 - A typical incandescent reading lamp runs at 60 W....Ch. 2.2 - In the wire of Fig. 2.7, electrons are moving left...Ch. 2.2 - For the element in Fig. 2.11, v1 = 17 V. Determine...Ch. 2.2 - Prob. 6PCh. 2.2 - Determine the power being generated by the circuit...Ch. 2.2 - Determine the power being delivered to the circuit...Ch. 2.2 - Your rechargeable smartphone battery has a voltage...Ch. 2.3 - Find the power absorbed by each element in the...Ch. 2.4 - Prob. 11P
Ch. 2.4 - Prob. 12PCh. 2.4 - The power absorbed by the resistor if i = 3 nA and...Ch. 2 - Convert the following to engineering notation: (a)...Ch. 2 - Convert the following to engineering notation:...Ch. 2 - Prob. 3ECh. 2 - Prob. 4ECh. 2 - Convert the following to SI units, taking care to...Ch. 2 - Prob. 6ECh. 2 - It takes you approximately 2 hours to finish your...Ch. 2 - A certain krypton fluoride laser generates 15 ns...Ch. 2 - Your recommended daily food intake is 2500 food...Ch. 2 - An electric vehicle is driven by a single motor...Ch. 2 - Under insolation conditions of 500 W/m2 (direct...Ch. 2 - A certain metal oxide nanowire piezoelectricity...Ch. 2 - Assuming a global population of 9 billion people,...Ch. 2 - The total charge flowing out of one end of a small...Ch. 2 - Prob. 15ECh. 2 - The total charge stored on a 1 cm diameter...Ch. 2 - A mysterious device found in a forgotten...Ch. 2 - A new type of device appears to accumulate charge...Ch. 2 - The current flowing through a tungsten-filament...Ch. 2 - The current waveform depicted in Fig. 2.28 is...Ch. 2 - The current waveform depicted in Fig. 2.29 is...Ch. 2 - A wind power system with increasing windspeed has...Ch. 2 - Two metallic terminals protrude from a device. The...Ch. 2 - The convention for voltmeters is to use a black...Ch. 2 - Determine the power absorbed by each of the...Ch. 2 - Determine the power absorbed by each of the...Ch. 2 - Determine the unknown current for the circuit in...Ch. 2 - A constant current of 1 ampere is measured flowing...Ch. 2 - Determine the power supplied by the leftmost...Ch. 2 - The currentvoltage characteristic of a silicon...Ch. 2 - A particular electric utility charges customers...Ch. 2 - The Tilting Windmill Electrical Cooperative LLC...Ch. 2 - A laptop computer consumes an average power of 20...Ch. 2 - You have just installed a rooftop solar...Ch. 2 - Prob. 35ECh. 2 - Some of the ideal sources in the circuit of Fig....Ch. 2 - Prob. 37ECh. 2 - Refer to the circuit represented in Fig. 2.35,...Ch. 2 - Prob. 39ECh. 2 - Prob. 40ECh. 2 - Prob. 41ECh. 2 - Determine the magnitude of the current flowing...Ch. 2 - Real resistors can only be manufactured to a...Ch. 2 - (a) Sketch the current-voltage relationship...Ch. 2 - Prob. 45ECh. 2 - Figure 2.38 depicts the currentvoltage...Ch. 2 - Examine the I-V characteristics in Fig. 2.38....Ch. 2 - Determine the conductance (in siemens) of the...Ch. 2 - Determine the magnitude of the current flowing...Ch. 2 - A 1% tolerance 1 k resistor may in reality have a...Ch. 2 - Utilize the fact that in the circuit of Fig. 2.39,...Ch. 2 - For the circuit in Fig. 2.39, suppose that the...Ch. 2 - For each of the circuits in Fig. 2.40, find the...Ch. 2 - Sketch the power absorbed by a 100 resistor as a...Ch. 2 - You built an android that has a subcircuit...Ch. 2 - Using the data in Table 2.4, calculate the...Ch. 2 - Prob. 58ECh. 2 - Prob. 59ECh. 2 - Prob. 60ECh. 2 - The resistance values in Table 2.4 are calibrated...Ch. 2 - Prob. 62ECh. 2 - Prob. 63ECh. 2 - The network shown in Fig. 2.42 can be used to...Ch. 2 - Prob. 65ECh. 2 - An LED operates at a current of 40 mA, with a...Ch. 2 - You have found a way to directly power your wall...
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- Calculate the mobility of electrons (m² /V.sec) of n-type material having resistivity of 0.5 Q-m, the number of donor atoms per m is 3x1019 www 0.2467 0.4167 O 0.4267 0.4507arrow_forwardQ3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? µ, = 250- cm and nį = 1.5 x 1010 cm-3arrow_forward4. The Silicon semiconductor (doped with 3 donor atoms per 6x10 Si atoms) is subjected to a 300 degrees K at which the mobility of electrons is 2500 cm? Find the following v-s given that the atoms per unit volume is indicated in the table: Drift Current in Semiconductors Property Ge Si Atomic number 32 14 Atomic weight 72.6 28.1 Density (gram/cm³) 5.32 2.33 Atoms per cm3 4.4x1022 5x1022 EGo (energy gap at 0 °K ) (eV) Eg (energy gap at 300 °K ) (eV) 0.785 1.21 0.72 1.1 ni (intrinsic carrier concentration) at 300° K (number Icm³) 2.5 x1013 1.5 x1010 2.3 x105 Intrinsic resistivity at 300° K (2- cm) un (electron mobility) (cm²/ V-sec) at 300° K 45 3800 1300 up (hole mobility) (cm²/ V-sec) at 300° K 1800 500 Dn (electron diffusion constant 99 34 at 300° K) (cm²/sec) Dp (hole diffusion constant at 300° K ) 47 13 (cm³/sec) A). Resistivity B). Conductivity C). If the semiconductor dimension is 10-cm. Determine the resistance.arrow_forward
- Q2) A silicon crystal having a cross-sectional area of 0.001cm and a length of 10 cm is connected at it s ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?arrow_forwardA silicon crystal having a cross-sectional area of 0.001cm and a length of 10'cm is connected at it's ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?arrow_forwardof con An p-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity of holes in this material. =1350 cm/s, H₂=480 cm/s Select one: O a 9.6x107 m/s O b. 9.6 x 10³ m/s Oc. None of these O d. 9.6x10³ m/sarrow_forward
- Assuming silicon with completely ionized dopants, compute n and p for the following case. N 5.00×10¹6 cm-³ N₁ = 0 T = 700 K -3 n (700 K)=2.865x10¹ cm-³arrow_forwardA p-type and n-type semiconductor participates in the positive and negative charge respectively. Please choose one: A) false B) truearrow_forward2 points Hall coefficient of a specimen of depend silicon found to be 3.66x10 m/C. The resistivity of the specimen is 8.93×10-³2 m. Find the density of the charge carriers (in electrons/m3) and the mobility in (m/V.s). 1.8e22, 0.04 O 1.8e22, 0.05 O 1.7e22, 0.05 O 1.7e22, 0.04 3 pointsarrow_forward
- 1) It is given as un 1350 cm2 / Vs and up = 480 cm2 / Vs in a silicon semiconductor at T = %3D %3D mwv w w mw m m 300K temperature. NA= 2x1015 cm3 ND= 2x1017 cm 3 calculate the specific resistance and specific conductivity values of the semiconductor w w w m wmwarrow_forwardA silicon crystal having a cross-sectional area of 0.002 cm² and a length of 0.01 cm is connected across a 20-V battery. At T = 300 K, a current of 0.25 A in the semiconductor is required. Calculate the required conductivity and use that to determine the density of donor atoms to be added to achieve this conductivity. Nd= 2.31 X 1014 cm-3 Nd = 3.09 X 1014 cm -3 Nd= 2.89 X 1014 cm-3 Nd=4.63 X 10¹4 cm-3arrow_forwardAt what temperature will intrinsic silicon become a conductor based on the definitions in Table ? Assume that μn=120 cm2/V·s and μp = 60 cm2/V·s. (Note that silicon melts at 1430 K.)arrow_forward
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