If the value of dc alpha is 0.5, then the value of dc beta of a transistor is O 10 O 0.1 01 O 100
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- Diodes and rectifiers allow current to _________. flow in one direction only flow in both directions divide paths of flow none of the aboveB. Determine the collector current in Q4 and reference current Ix of the circuit below. Assume silicon transistor is used ß = 100. vc 12V R1 3.5kQ Q1 2N3904 Q2 Q3 Q4 2N3904 2N3904 2N3904A. Determine the collector current in Q1, Q2, and Q3 and reference current Ix of the circuit below. Assume silicon transistor is used and ß = 100. vc 10V R1 2.2kn Q1 Q2 Q3 2N3904 2N3904 2N3904
- A transistor has a dc beta of 200 and a base current of 20 microAmpere. The collector current equals tor O 400 microAmpere O 4 microAmpere O 4 milliAmpere O 100 milliAmpere1. A base current of 50 mA is applied to the transistor below, and a voltage of 5 V is dropped across Rc. Determine the apc of the transistor. RŽ1.0 kN RB Vcc 100 kN VBB 0.99 O .095 0.97 0.96* Photo diodes can be used in the industry to Used as a light O Count the number of emoloyees O Count the number of the produced items * The transistor has four depletion layers O three depletion layers O two depletion layers O one depletion layer O
- Using complete diode model and assuming that the forwyd resistance of thediode is 152 and a Germanium diode, the voltage across the resistance R equals to R. 5k0 12V 11.65 V 11.7 V 12 V None of the above Moving to another question will save this response. MacBook ProSolve the collector current (Ic) of Figure 611. VCC 18V R2 3.9KQ O 1.83 mA 3.31 mA 2.1 mA 2.56 mA R1 680KQ Figure 611 Vc - BVDetermine the approximate value of drain current (Ip) of the given circuit below. VDD 20V 1.8ka a1 10mA -4.5V pss 1MO 9100 O 2.92 mA 2.48 mA O 1.88 mA 1.29 mA
- In the two transistor model of the SCR,anode current increases if a. alpha1 - alpha2 = 1 b. alpha2 = 1 c. alpha1 + alpha2 is nearest to 1 d. alpha1 = 1In a p-channel JFET, the charge carriers are Select one: a. both electrons and holes b. none of the above C. electrons d. holesIn a P-N-P transistor, the base will be of neither P or N material either P or N material P material O N material