QUESTION 4The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light isa)occurred when GaP wafer exposed to visible light, and the materials appears reddish.For visible light, the photon energy is in the range of 1.8 – 3.1 eV.In some semiconductor material the bottom of conduction band does not lie at theb)origin (k + 0). For the absorption process, the electrons absorb the photon and phononsimultaneously to make a transition from valence band to conduction band.Given the wavelength of photon is 2- 10°m and for optical phonon the wavelength is2~10-9m, respectively. Using the calculated values of energy and momentum ofphonon and photon, explain the main roles of photon and phonon for the transitionproses. (Given phonon velocity, Vph = 3000 ms-', speed of light, c = 3 x 108 ms1 andPlank constant, h= 4.1357 x 10-15 eVs)

Given, Energy band gap of GaP, ∆Eg = 2.26 eV For visible light, energy range is 1.8 - 3.1 eV

The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light is occurred when GaP wafer exposed to visible light, and the materials appears reddish. For visible light, the photon energy is in the range of 1.8 -3.1 eV.

The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light is occurred when GaP wafer exposed to visible light, and the materials appears reddish. For visible light, the photon energy is in the range of 1.8 -3.1 eV.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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