Q2: DC behavior Vin V 1. Increase PMOS width. 2. Increase NMOS Threshold voltage V₁ tn' 1.5 out 1 ( Left 0.5 Right ----- VM = VDD/2 1.5 In an inverter design, we size the PMOS and NMOS to have equal strength so that the inverter has non-skewed DC behavior, which means switching point VM = V/2. Please answer the impact of following changes on the circuit design, tell if the switching point in the VTC diagram will move Left, or move Right, or Unchanged. } 2

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Q2: DC behavior
in
1. Increase PMOS width.
2. Increase NMOS Threshold voltage V
tn"
V
out
2.5
(
2
1.5
1
0.5
0
0
Left
0.5
Right
VM = VDD/2
1.5
2
In an inverter design, we size the PMOS and NMOS to have equal strength so that the
inverter has non-skewed DC behavior, which means switching point VM = V/2. Please
answer the impact of following changes on the circuit design, tell if the switching point
in the VTC diagram will move Left, or move Right, or Unchanged.
2.5
Transcribed Image Text:Q2: DC behavior in 1. Increase PMOS width. 2. Increase NMOS Threshold voltage V tn" V out 2.5 ( 2 1.5 1 0.5 0 0 Left 0.5 Right VM = VDD/2 1.5 2 In an inverter design, we size the PMOS and NMOS to have equal strength so that the inverter has non-skewed DC behavior, which means switching point VM = V/2. Please answer the impact of following changes on the circuit design, tell if the switching point in the VTC diagram will move Left, or move Right, or Unchanged. 2.5
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P-channel Metal-Oxide Semiconductor (PMOS), N-channel Metal-Oxide Semiconductor (NMOS), and Complementary Metal-Oxide Semiconductor (CMOS)
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