For all the transistors shown below, B = 75. The results of some measurements are indicated on the figures. Find the values of the other labeled currents, voltages, and/or resistor values. +10 V +5 V +8 V +5 V Rc 10= 0.5 mA + VCE=4 V RE= 5 ΚΩ VB RB= 25 ΚΩ RC Vc=-1 V Ic RC= 4 ΚΩ Rc = 10 k RB = 20 kQ www -o Vc RB = 10 kQ www + VCE IB RE= 4 ΚΩ RE=2KQ -10 V (a) -5 V (b) -8 V (c) (d)

Figure 4 b) Figure 5 shows the silicon base BJT with a Rc = 1 kQ, Rg = 10 k2, Vcc = 11 V, VBB = 6 V, BDC = 99. Determine Ig, Ic, lE, VCE and VCB- Rc 1 ko Vc 10 kn 11 V VBB 6 V Figure 5

What is the value of Vgs, when Id is.10 ?constant reference voltage Vdd =12V @

In the circuit below, when a 2.2KN load is connected to the output, find the value of the current flowing through the R resistor (IR), the current passing through the zener diode (Iz) and the load current value (IL). Sigorta T1 Dr-De 1N4001 0,1A REGOLATOR D 220V AC Va-20V Vs AC Va 2200 De Vi-13V 15V 4700uF IN47448 Nominal Test Maximum Dynamic Impedance Maximum Reverse Zener Current Leakage Current Voltage) Vz @ IzT IZT ZT @ IzT ZZK @ IzK IZK IR Test Voltage VR V mA Ω Ω mA µA V 15 17 14 700 0.25 11.4 llle

In small-signal FETS, the DC voltage sources will be replaced by a Short circuit Current source O Open circuit Resistor

the section supplies the large section of majority charge carrier is called * others Base collector emitter

Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE= 10 V. Use standard valued 5% resistors and draw a schematic %3D diagram of your design

what are the transistor layer * 4 O 2 O O O O

Determine the approximate value of drain current (Ip) of the given circuit below. VDD 20V 1.8ka Q1 = 10mA -- 4.5V 1MO 9100 1.88 mA O 2.48 mA 1.29 mA O 2.92 mA

4. For the circuit given in Figure 3, determine Ig, Ic, Vg, VE, and VCE- Vcc=10V R1 220ka Rc 4.7kQ B= 300 VBE(on)=0.7V R2 51ka RE 1.2kQ Figure 3. Voltage divider biasing circuit.