4. Use a load-line analysis for the NMOS amplifier to determine the maximum, minimum, and Q-point values of vds. Draw the vas waveform vs time below. The V- I characteristic is for the same FET device. Vin (1) + ip (mA) 10 sin (2000ft) O VGG Hilf 4V + 6 Rp 2kQ VID D S 1 8 VDD VGS 4 V 3 V 2V 1 V₁ 10 Ups (V) 10 V

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4. Use a load-line analysis for the NMOS amplifier to determine the maximum,
minimum, and Q-point values of vas. Draw the vas waveform vs time below. The V-
I characteristic is for the same FET device.
Vin(1)
+
in (mA)
10
5
0
0
sin(2000mt)
2
4
VGG
il
4V
+
6
G
www
RD
2ΚΩ
VID
S
8
VDD
VGS 4 V
3 V
2 V
1 VI
10
VDS (V)
10 V
Transcribed Image Text:4. Use a load-line analysis for the NMOS amplifier to determine the maximum, minimum, and Q-point values of vas. Draw the vas waveform vs time below. The V- I characteristic is for the same FET device. Vin(1) + in (mA) 10 5 0 0 sin(2000mt) 2 4 VGG il 4V + 6 G www RD 2ΚΩ VID S 8 VDD VGS 4 V 3 V 2 V 1 VI 10 VDS (V) 10 V
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