Please answer in typing format 3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K underequilibrium?a) ~ 360 mVb)- 720 mV- 1380 mV- 230 mV~ 460 mVPx=-Wpx=0N2-60

Answered: 3.1.29 The following p-n junction is…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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3.1.29 The following p-n junction is formed using p-type (NA=1x1016 cm³) and n-type (ND-1x1016 cm³) Si. What is the electrostatic potential difference between x=-W, and x=0 at 300 K under equilibrium? a) ~ 360 mV b) - 720 mV - 1380 mV - 230 mV ~ 460 mV P x=-Wp x=0 N 2-60